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InGaAs sensors for SWIR spectroscopy (1-1.7 µm) Thermo-Electric vs LN2 cooling

CCDs are transparent to photons with energy below the Silicon bandgap (1.14 eV), and therefore cannot be used for detection in the Short Wave Infrared (SWIR) above ~1.1 µm. InGaAs-based detectors are favoured for scientific applications in this region due to the lower bandgap of this material. While InGaAs sensors offer excellent Quantum Efficiency QE) in the 0.6-1.7 µm, they do also suffer from elevated dark noise which have significant impact on detection performance.

This webinar will explore the implications of cooling InGaAs array detectors for scientific applications, looking at impact on QE, noise floor, signal-to-noise and dynamic range. The use of Thermo-Electrically cooled InGaAs detectors for challenging applications in Life Science, Chemistry and Material Science will also be demonstrated, and the advantages of using TE-cooled over LN2-cooled InGaAs detectors compared.

Learning Objectives:

  • Learn about the basics of Sensitivity and Signal-to-Noise performance for InGaAs sensor technology.
  • Learn how the impact of the cooling of these sensors on Sensitivity and Dynamic range for SWIR Spectroscopy in the 1-1.7 µm region.
  • Understand the performance of Thermo-Electrically cooled InGaAs cameras in comparison to LN2-based cameras.

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