New Performance-Enhanced Marana BSI sCMOS Camera
Andor Technology, an Oxford Instruments company and a world leader in scientific…
Marana-X is Andor’s ground breaking sCMOS platform tailored to EUV and soft X-ray applications. Hand crafted to deliver market leading performance and versatility Marana-X reads out a 4.2 Megapixel high resolution array in less than 50 milliseconds while maintaining very low read noise. The Marana-X is available in two variants, a large area 11 μm 4.2 megapixel format and a 6.5 μm 4.2 megapixel format.
High Resolution - 4.2 Megapixel
High Sensitivity - Up to 99% QE
Fast Speeds - Up to 74 fps
High Dynamic Range - Up to 16-bit
EMP Resistant - CoaXPress data interface
Marana-X is Andor’s ground breaking sCMOS platform tailored to EUV and soft X-ray applications. Hand crafted to deliver market leading performance and versatility Marana-X reads out a 4.2 Megapixel high resolution array in less than 50 milliseconds while maintaining very low read noise; hundreds of times faster than similar resolution CCD detectors.
Unparalleled Quantum Efficiency
The new Marana-X sCMOS boasts superior quantum efficiency in the EUV-1 keV energy range compared to existing CCDs. The excellent quantum efficiency of the Marana-X complements its high end scientific CMOS technology allowing the minimisation of experimental time and maximum data throughput with a rapid 74 fps full frame. Additionally, the sensor quantum efficiency and life time of the Marana-X has been fully characterised in a recent scientific publication by Harada and coworkers.
Up to 99% QE & lowest noise - Maximum signal to noise for light starved measurements. Achieve high contrast faster
Vacuum cooled to -45°C - Very weak signals require lowest noise floor and longer exposures: Don’t be restricted by camera thermal noise
4.2 Megapixel - High pixel resolution, maintaining image clarity over an extended field of view
The ONLY uncoated back-illuminated sCMOS - The Marana-X incorporated the world’s first uncoated back-illuminated sCMOS sensor enabling unparalleled EUV – soft x-ray detection
Extended Dynamic Range (EDR) Mode - One snap quantification’ across the full dynamic range, capture high and low intensity images in the same image
> 99.7% linearity - Market leading quantitative accuracy over the whole signal range.
Fan and liquid cooling as standard - Liquid cooling for maximum sensitivity
Model | Marana-X 4.2B-6 |
Sensor Type | Back-Illuminated Scientific CMOS |
Array Size | 2048 (W) x 2048 (H) 4.2 Megapixel |
Pixel Size | 6.5 x 6.5 µm |
Image Area | 13.3 mm x 13.3 mm (18.8 mm diagonal) |
Readout Modes | Rolling Shutter |
Pixel Readout Rates | 310 MHz (Fast High Dynamic Range mode, 16-bit) 180 MHz (Low Noise mode, 12-bit) |
Quantum Efficiency | up to 99% |
Read Noise (e-) median | 1.6 e- (Fast High Dynamic Range mode, 16-bit) 1.2 e- (Low Noise mode, 12-bit) |
Active area pixel well depth | 55 000 e- (Fast High Dynamic Range mode, 16-bit) 1800 e- (Low Noise mode, 12-bit, bit depth limited) |
Dynamic Range | 34 000:1 (Fast High Dynamic Range mode, 16-bit) |