Part of the Oxford Instruments Group
Expand

Marana-X sCMOS

Marana-X is Andor’s ground breaking sCMOS platform tailored to EUV and soft X-ray applications. Hand crafted to deliver market leading performance and versatility Marana-X reads out a 4.2 Megapixel high resolution array in less than 50 milliseconds while maintaining very low read noise. The Marana-X is available in two variants, a large area 11 μm 4.2 megapixel format and a 6.5 μm 4.2 megapixel format.

  • High Resolution - 4.2 Megapixel

  • High Sensitivity - Up to 99% QE

  • Fast Speeds - Up to 74 fps

  • High Dynamic Range - Up to 16-bit

  • EMP Resistant - CoaXPress data interface


Request Pricing Ask a Question Add to quote list

Marana-X is Andor’s ground breaking sCMOS platform tailored to EUV and soft X-ray applications. Hand crafted to deliver market leading performance and versatility Marana-X reads out a 4.2 Megapixel high resolution array in less than 50 milliseconds while maintaining very low read noise; hundreds of times faster than similar resolution CCD detectors.

Unparalleled Quantum Efficiency

The new Marana-X sCMOS boasts superior quantum efficiency in the EUV-1 keV energy range compared to existing CCDs. The excellent quantum efficiency of the Marana-X complements its high end scientific CMOS technology allowing the minimisation of experimental time and maximum data throughput with a rapid 74 fps full frame. Additionally, the sensor quantum efficiency and life time of the Marana-X has been fully characterised in a recent scientific publication by Harada and coworkers.

Up to 99% QE & lowest noise - Maximum signal to noise for light starved measurements. Achieve high contrast faster

Vacuum cooled to -45°C - Very weak signals require lowest noise floor and longer exposures: Don’t be restricted by camera thermal noise

4.2 Megapixel - High pixel resolution, maintaining image clarity over an extended field of view

The ONLY uncoated back-illuminated sCMOS - The Marana-X incorporated the world’s first uncoated back-illuminated sCMOS sensor enabling unparalleled EUV – soft x-ray detection

Extended Dynamic Range (EDR) Mode - One snap quantification’ across the full dynamic range, capture high and low intensity images in the same image

> 99.7% linearity - Market leading quantitative accuracy over the whole signal range.

Fan and liquid cooling as standard - Liquid cooling for maximum sensitivity

Model Marana-X 4.2B-6
Sensor Type Back-Illuminated Scientific CMOS
Array Size 2048 (W) x 2048 (H) 4.2 Megapixel
Pixel Size 6.5 x 6.5 µm
Image Area 13.3 mm x 13.3 mm (18.8 mm diagonal)
Readout Modes Rolling Shutter
Pixel Readout Rates 310 MHz (Fast High Dynamic Range mode, 16-bit)
180 MHz (Low Noise mode, 12-bit)
Quantum Efficiency up to 99%
Read Noise (e-) median 1.6 e- (Fast High Dynamic Range mode, 16-bit)
1.2 e- (Low Noise mode, 12-bit)
Active area pixel well depth 55 000 e- (Fast High Dynamic Range mode, 16-bit)
1800 e- (Low Noise mode, 12-bit, bit depth limited)
Dynamic Range 34 000:1 (Fast High Dynamic Range mode, 16-bit)

You may also be interested in...

Latest news